RN2507(TE85L,F)

Overview

The RN2507(TE85L,F) is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors (R1=10kΩ, R2=47kΩ) in an SMV (SOT-753) surface-mount package. Key electrical ratings include a collector-emitter voltage of -50V, a continuous collector current of -100mA, and a total power dissipation of 300mW at 25°C. The device features a transition frequency of 200MHz and a DC current gain (hFE) of 80 at IC=-10mA, VCE=-5V.

Feature Summary

• Integrates two PNP transistors with built-in bias resistors to simplify circuit design
• Reduces component count and manufacturing process steps compared to discrete solutions
• Provides complementary functionality to the RN1507 to RN1509 series

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's latest documentation to confirm packaging details and tape-and-reel specifications. Ensure compliance with RoHS directives and export control classifications (EAR99) relevant to your region before finalizing procurement orders.

Selection Notes

Select this component for applications requiring compact dual PNP switching with integrated base biasing. Verify that the required input resistance values (10kΩ and 47kΩ) align with the target circuit design. Confirm that the -50V voltage rating and -100mA current limits accommodate the maximum operational loads without exceeding the 300mW power dissipation threshold.

Part Context

This part belongs to the RN2507-RN2509 family of silicon PNP epitaxial type bias resistor built-in transistors. These devices are designed as surface-mount alternatives to through-hole discrete transistor networks, offering a standardized footprint for high-density PCB layouts while maintaining consistent electrical characteristics across the series.

Replacement Considerations

FMA9AT148 by Rohm Semiconductor is listed as a similar replacement option. Verify pinout compatibility and electrical parameter margins before substitution.

FAQ

What are the specific values of the built-in bias resistors?

For the RN2507, the internal bias resistors are configured with R1 at 10 kΩ and R2 at 47 kΩ.

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) for the RN2507 is -50 V.

Does this component support high-frequency switching?

Yes, the device has a transition frequency (fT) of 200 MHz, making it suitable for high-speed switching applications.