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The RN2510(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors into an SMV (super mini type with 5 leads) package, weighing approximately 14 mg. The device features a collector-emitter voltage rating of -50 V and a continuous collector current of -100 mA. Each transistor includes a typical input resistance of 4.7 kΩ. The component supports a maximum power dissipation of 300 mW and operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure compliance with environmental directives like RoHS by checking the latest product information sheets provided by the manufacturer before finalizing procurement orders.
Select this component for applications requiring dual PNP switching with integrated biasing in a space-constrained layout. Compare its electrical characteristics, specifically the 4.7 kΩ input resistance and -50 V voltage rating, against circuit requirements. Consider the complementary RN1510 series if NPN polarity is needed instead.
This component belongs to the RN2510/RN2511 family of silicon PNP epitaxial type transistors utilizing Toshiba's PCT process. It serves as a specialized discrete solution designed to replace multiple discrete components, offering a standardized alternative to general-purpose small signal transistors in pre-biased configurations.
The RN1510 series is documented as the complementary counterpart. Verify pinout compatibility and electrical ratings when substituting with other dual PNP digital transistors from different manufacturers.