RN2511(TE85L,F)

RN2511(TE85L,F)

$0.32
  • Description:TRANS 2PNP PREBIAS 0.3W SMV
  • Series:-

SKU:afd7849ac7f2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.3W SMV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74A, SOT-753
  • Supplier Device Package:SMV

Download product information

RN2511(TE85L,F)

Overview

The RN2511(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors into an SMV package, which features five leads. The device operates with a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. Each transistor includes a 10 kΩ input resistance. The component supports a maximum power dissipation of 300 mW and functions up to a transition frequency of 200 MHz.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors in a single compact package
  • Simplifies circuit design by reducing the quantity of external components required
  • Supports miniaturization of equipment through the use of a small footprint SMV package

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to maintain operational safety under varying thermal conditions.

Selection Notes

Select the RN2511 when a dual PNP configuration with integrated biasing is required. The 10 kΩ internal resistance suits standard logic interface applications. Compare performance metrics such as transition frequency and saturation voltage against alternative BRT models to ensure compatibility with the target switching speed and drive requirements.

Part Context

This component belongs to the RN2510/RN2511 series of silicon PNP epitaxial type transistors utilizing the PCT process. It serves as a complementary device to the NPN RN1510 and RN1511 series. The series is designed to replace discrete transistor and resistor combinations in space-constrained designs.

Replacement Considerations

Direct substitutes within the same family include the RN2510(TE85L,F), which differs only in its internal bias resistance value. Verify pinout compatibility and electrical ratings when considering cross-series replacements from other manufacturers.

FAQ

What is the typical input resistance for the RN2511?

The typical input resistance (R1) for the RN2511 is 10 kΩ.

What is the maximum collector-emitter voltage rating?

The absolute maximum collector-emitter voltage (VCEO) rating is -50 V.

Does the RN2511 contain one or two transistors?

The RN2511 contains two PNP transistors integrated into a single SMV package.

RN2511(TE85L,F)RN2511(TE85L,F)
$0.32
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