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The RN2511(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors into an SMV package, which features five leads. The device operates with a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. Each transistor includes a 10 kΩ input resistance. The component supports a maximum power dissipation of 300 mW and functions up to a transition frequency of 200 MHz.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines to maintain operational safety under varying thermal conditions.
Select the RN2511 when a dual PNP configuration with integrated biasing is required. The 10 kΩ internal resistance suits standard logic interface applications. Compare performance metrics such as transition frequency and saturation voltage against alternative BRT models to ensure compatibility with the target switching speed and drive requirements.
This component belongs to the RN2510/RN2511 series of silicon PNP epitaxial type transistors utilizing the PCT process. It serves as a complementary device to the NPN RN1510 and RN1511 series. The series is designed to replace discrete transistor and resistor combinations in space-constrained designs.
Direct substitutes within the same family include the RN2510(TE85L,F), which differs only in its internal bias resistance value. Verify pinout compatibility and electrical ratings when considering cross-series replacements from other manufacturers.
The typical input resistance (R1) for the RN2511 is 10 kΩ.
The absolute maximum collector-emitter voltage (VCEO) rating is -50 V.
The RN2511 contains two PNP transistors integrated into a single SMV package.