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The RN2601(TE85L,F) is a dual PNP digital transistor from Toshiba Semiconductor and Storage, housed in an SM6 (SOT-753) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a maximum power dissipation of 300 mW. The device features a transition frequency of 200 MHz and a DC current gain (hFE) of at least 30 at IC = -10 mA. The internal resistor configuration consists of R1 = 4.7 kΩ and R2 = 4.7 kΩ.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel size or tape specifications. Ensure that the procurement channel provides valid traceability for the semiconductor lot codes. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing orders.
Select this component when a dual PNP configuration with fixed 4.7k/4.7k bias resistors is required. Compare the 300mW power dissipation limit against thermal constraints in the target application. Verify that the -50V voltage rating accommodates the maximum operating voltages of the driven load or signal line.
This part belongs to the RN2601-RN2606 series of dual digital transistors. These devices are complementary to the RN1601-RN1606 N-channel series. The family utilizes Toshiba's PCT process technology to provide reliable performance in small-signal applications while maintaining a low profile suitable for modern surface-mount assembly requirements.
Publicly confirmed substitute part numbers are not available in the provided source material.