RN2601(TE85L,F)

RN2601(TE85L,F)

$0.31
  • Description:TRANS 2PNP PREBIAS 0.3W SM6
  • Series:-

SKU:5e1c809568e5 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.3W SM6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SM6

Download product information

RN2601(TE85L,F)

Overview

The RN2601(TE85L,F) is a dual PNP digital transistor from Toshiba Semiconductor and Storage, housed in an SM6 (SOT-753) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a maximum power dissipation of 300 mW. The device features a transition frequency of 200 MHz and a DC current gain (hFE) of at least 30 at IC = -10 mA. The internal resistor configuration consists of R1 = 4.7 kΩ and R2 = 4.7 kΩ.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors within a single compact package
  • Designed to reduce component count and simplify manufacturing processes for switching and driver circuits
  • Operates with a high junction temperature rating up to 150°C

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel size or tape specifications. Ensure that the procurement channel provides valid traceability for the semiconductor lot codes. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing orders.

Selection Notes

Select this component when a dual PNP configuration with fixed 4.7k/4.7k bias resistors is required. Compare the 300mW power dissipation limit against thermal constraints in the target application. Verify that the -50V voltage rating accommodates the maximum operating voltages of the driven load or signal line.

Part Context

This part belongs to the RN2601-RN2606 series of dual digital transistors. These devices are complementary to the RN1601-RN1606 N-channel series. The family utilizes Toshiba's PCT process technology to provide reliable performance in small-signal applications while maintaining a low profile suitable for modern surface-mount assembly requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.

RN2601(TE85L,F)RN2601(TE85L,F)
$0.31
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