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The RN2602(TE85L,F) is a dual PNP epitaxial planar silicon transistor with built-in bias resistors, manufactured by Toshiba Semiconductor and Storage. It integrates two devices into an SMV (SM6) surface-mount package to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 300 mW. The internal bias resistors are both 10 kΩ. The device features a transition frequency of 200 MHz and a DC current gain of 50 at IC = -10 mA.
Verify the specific part number suffix TE85L,F against official Toshiba documentation to confirm packaging and reel specifications. Ensure compatibility with RoHS standards if required by the target application. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or handling guidelines before finalizing procurement.
Select this component when a dual PNP pre-biased transistor is required for space-constrained designs. The 10 kΩ resistor values suit applications needing moderate base drive currents. Verify that the -50 V rating meets the system voltage requirements. Consider thermal management as the total power dissipation is limited to 300 mW across both transistors in the shared package.
This component belongs to the RN2601-RN2606 series of dual PNP pre-biased transistors. These devices are designed as complementary counterparts to the NPN RN1601-RN1606 series. They share the same SMV package footprint but differ in internal resistor values and polarity, allowing for flexible design choices in push-pull or differential configurations.
Direct pin-compatible replacements must match the dual PNP configuration, -50 V rating, and 10 kΩ/10 kΩ resistor values. Check alternative manufacturers for equivalent SMV packages. Verify that substitute components meet the 200 MHz transition frequency requirement for high-speed switching applications.