RN2603(TE85L,F)

RN2603(TE85L,F)

$0.31
  • Description:TRANS 2PNP PREBIAS 0.3W SM6
  • Series:-

SKU:3f6bede260da Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.3W SM6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:300mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SM6

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RN2603(TE85L,F)

Overview

The RN2603(TE85L,F) is a dual PNP digital transistor from Toshiba Semiconductor and Storage, integrating two NPN transistors with built-in bias resistors in an SM6 surface-mount package. It features a collector-emitter voltage of -50V and a continuous collector current of -100mA. The device includes two 22kΩ bias resistors (R1 and R2). Key electrical characteristics include a DC current gain (hFE) of 70 at VCE=-5V and IC=-10mA, a transition frequency (fT) of 200MHz, and a collector power dissipation of 300mW.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and manufacturing processes by combining active and passive elements
  • Provides high-speed switching capabilities suitable for interface and driver applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel quantity and tape specifications. Ensure that the procurement channel provides valid traceability and authenticity certificates for semiconductor components. Cross-reference the manufacturer part number with authorized distributor databases to confirm current availability status and lead times before finalizing orders.

Selection Notes

Select the RN2603(TE85L,F) when a dual PNP configuration with 22kΩ bias resistors is required for space-constrained designs. Compare its 200MHz transition frequency and -50V breakdown voltage against alternative digital transistors to ensure compatibility with the target switching speed and voltage levels. Verify that the SM6 package dimensions fit within the available PCB real estate constraints.

Part Context

This component belongs to the RN2601-RN2606 series of dual PNP digital transistors manufactured using Toshiba's PCT process. The series offers complementary options to the RN1601-RN1606 family, providing designers with various resistor value combinations within the same compact SM6 footprint. This standardization facilitates inventory management across different circuit requirements.

Replacement Considerations

Direct replacements must match the dual PNP configuration, -50V rating, and 22kΩ/22kΩ resistor values. Verify pinout compatibility with the SM6 package. Consult Toshiba application notes for cross-referencing guidelines to ensure equivalent electrical performance in switching and driver applications.

RN2603(TE85L,F)RN2603(TE85L,F)
$0.31
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