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The RN2604(TE85L,F) is a dual pre-biased PNP transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an SMV (SC-74A/SOT-753) surface-mount package. The device features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 300 mW. Each transistor includes a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ. The transition frequency is 200 MHz, and the DC current gain (hFE) is typically 80 at -10 mA.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel size or tape specifications. Confirm that the SMV package designation aligns with your PCB footprint requirements before finalizing procurement orders.
Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. Ensure the 47 kΩ resistor values match the target drive currents and logic levels. Verify thermal constraints, as the total power dissipation rating applies to both devices within the package.
This part belongs to the RN2601-RN2606 series of dual pre-biased transistors. These components are designed to replace discrete transistor and resistor combinations, offering a compact solution for digital switching applications. The series utilizes Toshiba's PCT process technology for silicon PNP epitaxial transistors.
Check for direct equivalents from other manufacturers offering dual PNP arrays in SOT-753 packages with similar 47kΩ/47kΩ bias configurations. Verify pinout compatibility and electrical parameters such as VCEO and hFE before substitution.