RN2605(TE85L,F)

Overview

The RN2605(TE85L,F) is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors (R1=2.2 kΩ, R2=47 kΩ) in an SM6 surface-mount package. Key electrical ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 300 mW. The device features a transition frequency of 200 MHz and a minimum DC current gain of 80 at -10 mA.

Feature Summary

• Integrates two NPN transistors with fixed internal bias resistors to simplify circuit design
• Reduces component count and manufacturing steps by combining active devices and passive elements
• Provides high-speed switching capability suitable for interface and driver applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details. Ensure compatibility with standard SMD reflow processes. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement specifications.

Selection Notes

Select this component when a compact dual NPN solution with integrated base and emitter resistors is required. The specific resistor values (2.2 kΩ and 47 kΩ) are optimized for standard logic interfacing. Consider the 300 mW total power dissipation limit when designing thermal management for dense PCB layouts.

Part Context

This part belongs to the RN2601-RN2606 series of dual pre-biased transistors. It serves as a complementary counterpart to the PNP-based RN1601-RN1606 series. The family shares the same SM6 package footprint but varies in internal resistor ratios and transistor polarity to support diverse digital logic requirements.

Replacement Considerations

Direct substitutes must match the NPN configuration, SM6 package, and similar bias resistor values. Verify that alternative parts meet the -50 V voltage rating and 200 MHz transition frequency requirements for equivalent performance in switching applications.