RN2606(TE85L,F)

Overview

The RN2606(TE85L,F) is a dual PNP digital transistor from Toshiba Semiconductor and Storage, housed in an SM6 package with six leads. It integrates two NPN-equivalent PNP transistors with built-in bias resistors (R1: 4.7 kΩ, R2: 47 kΩ). Key electrical ratings include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 300 mW at 25°C. The device features a minimum DC current gain (hFE) of 80 at -10 mA, a transition frequency (fT) of 200 MHz, and operates within a junction temperature range up to 150°C.

Feature Summary

• Integrates two PNP transistors with fixed internal bias resistors to simplify circuit design.
• Reduces component count and manufacturing steps by combining active devices and passive elements.
• Provides complementary functionality to the RN1601 through RN1606 series.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific part number suffix against official Toshiba documentation to confirm packaging and tape specifications. Ensure that the SM6 package dimensions and pinout align with the target PCB footprint. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. The 4.7 kΩ input resistor suits standard logic interface levels. Verify that the -50 V rating meets the system voltage requirements and that the 300 mW thermal dissipation capability is sufficient for the intended operating environment.

Part Context

This device belongs to the RN2601–RN2606 family of silicon PNP epitaxial planar transistors utilizing Toshiba’s PCT process. The family shares identical electrical characteristics and package types, differing only in the resistance values of the built-in bias resistors. The RN2606 specifically pairs a 4.7 kΩ resistor with a 47 kΩ resistor.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Designers should evaluate other dual PNP digital transistors with similar bias ratios and SM6 packaging, ensuring voltage and current ratings match or exceed the original specifications.

FAQ

What are the specific resistance values for the RN2606?

The RN2606 includes two built-in bias resistors: R1 is 4.7 kΩ and R2 is 47 kΩ.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is rated at -50 V.

Does this component support high-frequency switching applications?

Yes, the device has a transition frequency (fT) of 200 MHz, making it suitable for high-speed switching and interface applications.