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The RN2607(TE85L,F) is a dual PNP pre-biased bipolar transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in an SM-6 (SOT-26) surface-mount package. Key electrical specifications include a collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a power dissipation of 300 mW. The device features a typical input resistance configuration of 10 kΩ and 47 kΩ, supporting a maximum operating frequency of 200 MHz.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm packaging type and lead-free status. Ensure compatibility with SM-6 footprint requirements during procurement. Cross-reference datasheet revisions to confirm electrical parameters match design specifications before ordering.
Select this component when dual PNP switching with integrated biasing is required. The 10k/47k resistor configuration suits standard logic interface levels. Consider the 300mW power dissipation limit and -50V voltage rating for circuit protection. Verify thermal management needs for the SM-6 package in dense layouts.
This part belongs to Toshiba's RN series of Bias Resistor Built-in Transistors (BRT). These devices replace discrete resistor-transistor networks, reducing board space and assembly costs. The RN2607 specifically targets applications requiring dual PNP switching capabilities with minimal external components.
Public confirmed substitutes are not explicitly listed in the provided source material. Consult Toshiba's official replacement guide or cross-reference tools for equivalent dual PNP BRTs with matching voltage, current, and package specifications.