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The RN2608(TE85L,F) is a pre-biased dual PNP bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in an SM6 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, continuous collector current of 100 mA, and power dissipation of 300 mW. The device features a transition frequency of 200 MHz. Internal resistor values are specified as R1 = 22 kOhms and R2 = 47 kOhms.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm the reel packaging configuration. Ensure compatibility with lead-free (LF) assembly processes if required by the manufacturing specification. Cross-reference the SM6 package dimensions with the mechanical drawing prior to PCB footprint finalization.
Select this component for applications requiring dual PNP switching with integrated base biasing. The 22 kOhm and 47 kOhm internal resistors define the drive characteristics. Consider the 300 mW power dissipation limit and -50 V voltage rating when designing the thermal and electrical margins for the target circuit environment.
This part belongs to Toshiba's RN series of pre-biased digital transistors. These components combine bipolar transistors with on-chip resistors to reduce external component count. The RN2608 specifically utilizes a dual PNP configuration, distinguishing it from single-transistor or NPN variants within the same product family.
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout and electrical specifications carefully if considering alternative manufacturers' dual PNP pre-biased transistors.