RN2610(TE85L,F)

Overview

The RN2610 is a dual PNP bias resistor built-in transistor manufactured by Toshiba Electronic Devices & Storage Corporation. It integrates two devices into an SM6 (super mini type with 6 leads) package, featuring built-in bias resistors to simplify circuit design and reduce component count. The device operates with a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 120 at -1 mA, a transition frequency (fT) of 200 MHz, and a typical input resistance (R1) of 4.7 kΩ. Power dissipation is rated at 300 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates two PNP transistors with built-in bias resistors in a compact SM6 package
• Simplifies circuit design by reducing the quantity of external parts and manufacturing processes
• Provides various resistance values suitable for diverse circuit designs

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as tape and reel specifications or cut tape availability. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement. Ensure that the selected component meets all applicable environmental regulations relevant to the target market.

Selection Notes

Select the RN2610 when a dual PNP configuration with integrated biasing is required for space-constrained designs. Verify that the 4.7 kΩ typical input resistance aligns with the driving source requirements. Ensure the -50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Consider the 300 mW power dissipation limit relative to the ambient temperature and thermal management capabilities of the PCB layout.

Part Context

The RN2610 belongs to Toshiba's Bias Resistor Built-In Transistor (BRBT) family, utilizing Silicon PNP Epitaxial Type technology via the PCT process. It serves as a complementary component to the RN1610 NPN variant. The device is designed to minimize board space and assembly costs by consolidating discrete transistor and resistor components into a single surface-mount package.

Replacement Considerations

The RN1610 is documented as the complementary NPN counterpart. For direct replacement, verify pinout compatibility and electrical parameters such as hFE, VCEO, and input resistance against the original design requirements. No other specific substitute part numbers are confirmed in the provided documentation.