SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2701JE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors into an Extreme-Super-Mini 5-pin package, featuring internal bias resistors R1 and R2 both valued at 4.7 kΩ. The device supports a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -100 mA. Electrical characteristics include a DC current gain (hFE) minimum of 30 at -10 mA/-5 V, a transition frequency (fT) of 200 MHz, and a total collector power dissipation of 100 mW.
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details such as reel specifications or tape dimensions. Ensure compliance with RoHS directives and intended use restrictions before procurement. Confirm that the absolute maximum ratings align with the target application's operating conditions to maintain reliability standards.
Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. The 4.7 kΩ resistor values are suitable for standard logic interface levels. Consider the complementary NPN series RN1701JE to RN1706JE if a full complementary pair is needed for push-pull configurations.
This part belongs to the RN2701JE to RN2706JE family of Silicon PNP Epitaxial Type transistors utilizing Toshiba's PCT Process. The JE suffix indicates the specific resistor value combination within the series, while the TE85L,F suffix denotes the specific packaging format provided by the manufacturer.
Direct replacements must match the dual PNP configuration, 50 V rating, and 4.7 kΩ/4.7 kΩ resistor values. Verify pinout compatibility with the 5-pin USV/SC-70-5 package. Check equivalent hFE and fT specifications to ensure performance parity in the target circuit.