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The RN2701,LF is a dual bias resistor built-in transistor (BRBT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors in a USV (5-lead ultra super mini) surface-mount package. The device supports a collector-emitter voltage of -50 V and a maximum collector current of -100 mA per transistor. Internal resistors R1 and R2 are both nominally 4.7 kΩ. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at -10 mA/-5 V, a saturation voltage of -0.3 V max at -5 mA/-0.25 mA base current, and a transition frequency of 200 MHz.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging type and compliance status. Confirm that the intended application does not fall under restricted categories such as nuclear or aerospace systems. Ensure operating parameters remain within absolute maximum ratings to maintain reliability standards defined in the Toshiba Semiconductor Reliability Handbook.
Select the RN2701,LF when a dual PNP configuration with fixed 4.7 kΩ bias resistors is required. Compare hFE requirements against the minimum value of 30 specified at -10 mA. Consider the USV package dimensions for space-constrained designs. Evaluate thermal dissipation limits, noting the total power rating applies to both devices within the single package.
The RN2701 belongs to the RN2701 through RN2706 series of silicon PNP epitaxial type BRBTs. These components share the same physical package and general electrical structure but differ in internal resistor values. The RN2701 specifically pairs two PNP transistors with identical 4.7 kΩ resistors, offering a complementary solution to the NPN-based RN1701 series.
Direct functional substitutes within the same family include RN2702, RN2703, RN2704, RN2705, and RN2706, provided their specific resistor values match the circuit requirements. Cross-family replacements require verification of pin compatibility, voltage ratings, and current capabilities.