RN2702,LF

RN2702,LF

$0.20
  • Description:TRANSISTOR PNPX2 BRT Q1BSR10KOHM
  • Series:-

SKU:4d0fc4909012 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANSISTOR PNPX2 BRT Q1BSR10KOHM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:USV

Download product information

RN2702,LF

Overview

The RN2702,LF is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors (R1=10 kΩ, R2=10 kΩ) in a USV package. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a transition frequency of 200 MHz. The device features a maximum power dissipation of 200 mW and a DC current gain (hFE) of 50 at -10 mA.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and manufacturing process steps for equipment miniaturization
  • Provides complementary functionality to the RN1701 series NPN devices

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Confirm that the requested part number matches the exact resistance values and package style required for the design. Ensure all environmental regulations such as RoHS are met for the intended application region.

Selection Notes

Select this component when a dual PNP configuration with integrated base and emitter resistors is required. The 10 kΩ resistor values suit applications needing moderate drive currents. Verify that the -50 V rating and -100 mA current capacity align with the system's operational limits and thermal constraints.

Part Context

This component belongs to the RN2701 to RN2706 series of silicon PNP epitaxial type transistors utilizing the PCT process. These devices are designed to replace discrete transistor and resistor combinations, offering a compact solution for logic interface and switching tasks in space-constrained electronic designs.

Replacement Considerations

RN2701,LF

FAQ

What are the built-in resistor values for the RN2702?

The RN2702 includes two built-in resistors, R1 and R2, both with a nominal value of 10 kΩ.

Is the RN2702 compatible with the RN1702?

Yes, the RN2702 is the PNP counterpart to the RN1702 NPN device, providing complementary functionality within the same series.

What is the maximum collector-emitter voltage?

The absolute maximum rating for the collector-emitter voltage (VCEO) is -50 V.

RN2702,LFRN2702,LF
$0.20
Buy Now