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The RN2702,LF is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors (R1=10 kΩ, R2=10 kΩ) in a USV package. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a transition frequency of 200 MHz. The device features a maximum power dissipation of 200 mW and a DC current gain (hFE) of 50 at -10 mA.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Confirm that the requested part number matches the exact resistance values and package style required for the design. Ensure all environmental regulations such as RoHS are met for the intended application region.
Select this component when a dual PNP configuration with integrated base and emitter resistors is required. The 10 kΩ resistor values suit applications needing moderate drive currents. Verify that the -50 V rating and -100 mA current capacity align with the system's operational limits and thermal constraints.
This component belongs to the RN2701 to RN2706 series of silicon PNP epitaxial type transistors utilizing the PCT process. These devices are designed to replace discrete transistor and resistor combinations, offering a compact solution for logic interface and switching tasks in space-constrained electronic designs.
RN2701,LF
The RN2702 includes two built-in resistors, R1 and R2, both with a nominal value of 10 kΩ.
Yes, the RN2702 is the PNP counterpart to the RN1702 NPN device, providing complementary functionality within the same series.
The absolute maximum rating for the collector-emitter voltage (VCEO) is -50 V.