RN2702TE85LF

RN2702TE85LF

  • Description:TRANS 2PNP PREBIAS 0.2W USV
  • Series:-

SKU:4119f029f16d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.2W USV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:5-SSOP

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RN2702TE85LF

Overview

The RN2702 is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two NPN-type devices within a USV (ultra super mini type with 5 leads) package, weighing approximately 6.2 mg. The component features built-in bias resistors R1 and R2, both rated at 10 kΩ nominal value. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 200 mW. The transition frequency is specified at 200 MHz, with a DC current gain minimum of 50.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors in a compact five-lead surface mount package to simplify circuit design and reduce component count.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as tape and reel specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the selected variant matches the required resistance values for the intended application design.

Selection Notes

Select the RN2702 when a dual PNP configuration with equal 10 kΩ bias resistors is required. This part serves as the complementary counterpart to the RN1702 NPN series. Evaluate the 200 mW total power dissipation limit and -50 V voltage ratings to ensure suitability for the target switching or driver application constraints.

Part Context

The RN2702 belongs to the RN2701 through RN2706 family of silicon PNP epitaxial type transistors utilizing Toshiba's PCT process. These components are designed for high-density mounting in portable equipment. The family offers various resistance combinations to accommodate different circuit design requirements while maintaining a standardized footprint.

Replacement Considerations

The RN1702 is the direct complementary NPN equivalent within the same Toshiba series. Cross-referencing with other manufacturers requires verifying matching polarity, voltage ratings, current capabilities, and internal resistor values to ensure functional compatibility.

RN2702TE85LFRN2702TE85LF

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