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Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.1W ESV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：22kOhms
- Resistor - Emitter Base (R2)：22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN2703JE(TE85L,F) is a PNP epitaxial type bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two devices into an Extreme-Super-Mini (USV) package with five pins. The component features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 100 mW. Internal resistors R1 and R2 are both 22 kΩ. The DC current gain is 70 at -10 mA and -5 V, with a transition frequency of 200 MHz.
Feature Summary
- Integrates two PNP transistors and bias resistors into a single compact package to reduce parts count.
- Utilizes the Extreme-Super-Mini (USV) 5-pin surface mount form factor for space-saving designs.
- Includes internal base and emitter resistors to simplify circuit design and lower assembly costs.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the TE85L suffix against official Toshiba documentation to confirm reel packaging specifications. Ensure the LF designation aligns with RoHS3 compliance requirements for your target market. Cross-reference the exact part number with authorized distributors to confirm availability and lead times before finalizing procurement plans.
Selection Notes
Select this component when a dual PNP configuration with integrated biasing is required in a minimal footprint. The 22 kΩ resistor values suit applications needing moderate input impedance. Verify that the -50 V rating and 100 mA current capacity meet the specific load requirements of the switching or driver application.
Part Context
This part belongs to the RN2701JE to RN2706JE series from Toshiba Electronic Devices & Storage Corporation. All members share identical electrical characteristics and package dimensions, differing only in the internal resistor values. This series is designed as complementary counterparts to the NPN RN1701JE to RN1706JE lineup.
Replacement Considerations
RN2703JE is functionally equivalent to RN2703JE(TE85L,F) regarding electrical performance. Other series members like RN2702JE or RN2704JE may serve as alternatives if different resistor ratios are acceptable. No other direct substitutes are confirmed in the provided source material.
FAQ
What are the internal resistor values for the RN2703JE?
The RN2703JE incorporates two internal resistors, R1 and R2, both with a nominal value of 22 kΩ.
What is the maximum collector-emitter voltage for this device?
The absolute maximum rating for the collector-emitter voltage (VCEO) is -50 V.
Does this component contain one or two transistors?
The RN2703JE contains two PNP transistors incorporated into a single package.
