RN2703,LF

RN2703,LF

$0.20
  • Description:PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
  • Series:-

SKU:e10799d96811 Category: Brand:

  
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Product Detailed Parameters

  • Description:PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:USV

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RN2703,LF

Overview

The RN2703,LF is a dual pre-biased PNP transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors (R1=22 kΩ, R2=22 kΩ) in a USV package. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a transition frequency of 200 MHz. The device features a DC current gain of 70 at -10 mA and -5 V, with a maximum collector-emitter saturation voltage of -0.3 V.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to simplify circuit design
  • Reduces component count and manufacturing process steps for equipment miniaturization
  • Utilizes ultra super mini type USV package for compact surface mount applications

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and environmental declarations prior to finalizing procurement orders. Ensure compatibility with existing assembly processes regarding moisture sensitivity levels and soldering profiles.

Selection Notes

Select this component when a dual PNP configuration with fixed 22 kΩ base and emitter resistors is required. Compare the -50 V breakdown voltage and -100 mA current limits against circuit requirements. Consider the 200 MHz transition frequency for high-speed switching needs relative to alternative resistor networks.

Part Context

This part belongs to the RN2701 to RN2706 series of silicon PNP epitaxial type bias resistor built-in transistors. The series utilizes Toshiba's PCT process technology. The RN2703 variant specifically provides matched 22 kΩ resistors for both Q1 and Q2, distinguishing it from other series members with different resistance values.

Replacement Considerations

No verified public substitute part numbers are available in the provided source material.

RN2703,LFRN2703,LF
$0.20
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