ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.1W ESV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
Download product information
Overview
The RN2704JE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two transistors with internal bias resistors into an Extreme-Super-Mini package, reducing component count and assembly costs. The device features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 100 mW. Each integrated resistor has a nominal value of 47 kΩ. The transition frequency is typically 200 MHz, and the DC current gain is at least 80 at -10 mA.
Feature Summary
- Dual PNP transistors integrated with bias resistors in a single compact package to reduce parts count.
- Designed for switching, inverter, interface, and driver circuit applications.
- Complementary to the RN1701JE to RN1706JE NPN series.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the TE85L suffix against official Toshiba documentation to confirm reel specifications and tape dimensions. Ensure compliance with RoHS3 standards and check MSL ratings before storage. Confirm that the application does not involve unintended uses such as aerospace or medical equipment requiring extraordinary reliability.
Selection Notes
Select this component when a dual PNP configuration with fixed base biasing is required to simplify PCB layout. The 47 kΩ resistor values are suitable for standard logic level driving. Consider thermal derating if operating near the 100 mW limit. Verify compatibility with the complementary RN1904 series if NPN alternatives are needed.
Part Context
This part belongs to the RN2701JE to RN2706JE family of Silicon PNP Epitaxial Type transistors using the PCT Process. These devices share the same package and general electrical characteristics but differ in internal resistor values. The RN2704JE specifically utilizes symmetric 47 kΩ resistors for both channels.
Replacement Considerations
RN2704LF: Alternative package variant from the same manufacturer. RN1904: Complementary NPN version with identical resistor values. Check datasheet for pinout and electrical parameter equivalence before substitution.
FAQ
What is the nominal resistance value for the RN2704JE?
Both internal bias resistors (R1 and R2) have a nominal value of 47 kΩ.
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is -50 V.
Is this device suitable for high-frequency applications?
Yes, it has a typical transition frequency (fT) of 200 MHz.
