ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PNPX2 BRT Q1BSR22KOHM Q1BER22KOH
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：47kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200MHz
- Power - Max：200mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package：USV
Download product information
Overview
The RN2704,LF is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors (R1=47kΩ, R2=47kΩ) in a USV package. Key electrical parameters include a collector-emitter voltage of -50V, collector current of -100mA, and transition frequency of 200MHz. The device features a DC current gain of 80 at -10mA/-5V and a saturation voltage of -0.3V max at -5mA/-0.25mA.
Feature Summary
- Integrates two PNP transistors with built-in bias resistors to simplify circuit design
- Reduces component count and manufacturing process steps for miniaturization
- Provides various resistance values to suit different circuit designs
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status directly with the supplier or through the latest datasheet revision notes before finalizing procurement orders.
Selection Notes
Select this component when a dual PNP configuration with equal 47kΩ base and emitter resistors is required. Ensure the operating conditions remain within the absolute maximum ratings, specifically the -50V collector-emitter voltage and -100mA collector current limits defined in the datasheet.
Part Context
This part belongs to the RN2701 to RN2706 series of silicon PNP epitaxial type transistors utilizing Toshiba's PCT process. The series offers complementary options to the NPN RN1701 to RN1706 lineup, providing standardized bias resistor configurations for common interface applications.
Replacement Considerations
RN2701, LF
FAQ
What are the specific resistance values for R1 and R2 in the RN2704?
Both the base resistor (R1) and the emitter resistor (R2) are set to 47 kΩ.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at -50 V.
Is this device suitable for high-frequency switching applications?
Yes, it has a transition frequency (fT) of 200 MHz, making it suitable for general switching and interface applications.
