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Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.1W ESV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：2.2kOhms
- Resistor - Emitter Base (R2)：47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN2705JE(TE85L,F) is a dual PNP bias resistor built-in transistor from Toshiba, housed in an Extreme-Super-Mini 5-pin package. It integrates two PNP transistors with internal bias resistors to reduce component count and assembly costs. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (PC) of 100 mW. The device features a typical DC current gain (hFE) of 80 at IC = -10 mA and a transition frequency (fT) of 200 MHz. Internal resistors are R1 = 2.2 kΩ and R2 = 47 kΩ.
Feature Summary
- Integrates two PNP transistors with bias resistors into a single compact 5-pin package to minimize parts count.
- Designed for switching, inverter, interface, and driver circuit applications to facilitate equipment miniaturization.
- Complementary configuration available within the same series using NPN types.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape width or reel quantity. Confirm RoHS compliance status directly with the supplier prior to procurement. Ensure the design accounts for the absolute maximum ratings to maintain reliability under operating conditions.
Selection Notes
Select this component when space constraints require integrating both transistor and bias resistor functions. The RN2705JE variant specifically provides a 2.2 kΩ base resistor (R1) and a 47 kΩ emitter resistor (R2). Verify that the required input impedance and drive characteristics align with these fixed internal values compared to other variants in the RN2701JE-RN2706JE series.
Part Context
This part belongs to the RN2701JE through RN2706JE family of Silicon PNP Epitaxial Type Bias Resistor Built-in Transistors. These devices utilize Toshiba's PCT process technology. The family offers various resistor combinations to suit different logic levels and drive requirements while maintaining the same physical footprint and pinout configuration.
Replacement Considerations
Direct functional equivalents within the same series include RN2701JE, RN2702JE, RN2703JE, RN2704JE, and RN2706JE. Selection among these depends on matching the specific internal resistor ratios (R1/R2) and hFE requirements. No cross-manufacturer substitutes are verified in the provided source material.
FAQ
What are the internal resistor values for the RN2705JE?
The RN2705JE incorporates a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 47 kΩ.
Is the RN2705JE complementary to any NPN devices?
Yes, it is complementary to the RN1701JE through RN1706JE series of NPN bias resistor built-in transistors.
What is the maximum collector-emitter voltage rating?
The absolute maximum rating for collector-emitter voltage (VCEO) is -50 V.
