RN2705,LF

Overview

The RN2705,LF is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an ultra super mini (USV) package. The device supports a collector-emitter voltage of -50 V and a maximum collector current of -100 mA per transistor. Internal resistance values are R1 = 2.2 kΩ and R2 = 47 kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 80 at -10 mA and -5 V, a saturation voltage of -0.3 V maximum at -5 mA, and a transition frequency of 200 MHz.

Feature Summary

• Integrates two PNP transistors with dedicated bias resistors in a single compact USV package to reduce component count.
• Simplifies circuit design for switching, inverter, interface, and driver applications by eliminating external base resistors.
• Provides complementary functionality within the RN2701 to RN2706 series alongside the RN1701 to RN1706 NPN counterparts.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific part number RN2705,LF against official Toshiba documentation to confirm availability and compliance status. Ensure that the required resistance ratio and electrical parameters match the design specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP configuration with asymmetric bias resistors (R1=2.2kΩ, R2=47kΩ) is required. The low input impedance provided by the 2.2 kΩ resistor makes it suitable for driving loads requiring higher base currents compared to standard high-resistance variants.

Part Context

This component belongs to the RN2701 through RN2706 series of PNP epitaxial transistors utilizing Toshiba's PCT process. These devices share the same physical USV footprint but vary in internal resistor values to accommodate different logic levels and drive requirements across various electronic designs.

Replacement Considerations

RN2705JE(TE85L,F)