RN2706JE(TE85L,F)

Overview

The RN2706JE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a power dissipation of 100 mW. Internal resistors are configured as R1 = 4.7 kΩ and R2 = 47 kΩ. The transition frequency is 200 MHz, and the DC current gain is 80 at -10 mA and -5 V.

Feature Summary

• Dual PNP transistors integrated with bias resistors in a single compact package to reduce component count.
• Designed for switching, inverter, interface, and driver circuits to lower assembly costs.
• Complementary configuration available within the same series using NPN types.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm packaging type and reel specifications. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the absolute maximum ratings align with your system's operating conditions to maintain reliability standards.

Selection Notes

Select this component when a dual PNP solution with fixed bias resistors is required for space-constrained designs. The 4.7 kΩ and 47 kΩ resistor values suit standard logic interface applications. Consider the complementary RN1706JE if an NPN equivalent is needed. Verify thermal derating requirements for high-temperature environments to ensure stable operation within the 100 mW dissipation limit.

Part Context

This part belongs to the RN2701JE through RN2706JE series of Silicon PNP Epitaxial Type Bias Resistor Built-in Transistors. The series utilizes Toshiba's PCT Process technology. The RN2706JE specifically pairs a 4.7 kΩ base resistor with a 47 kΩ emitter resistor, distinguishing it from other variants in the family with different resistance ratios.

Replacement Considerations

The RN1706JE serves as the complementary NPN counterpart within the same series. No direct cross-manufacturer substitutes are confirmed in the provided source material. Designers should verify pin compatibility and electrical characteristics if considering alternative vendors.

FAQ

What are the internal resistor values for the RN2706JE?

The RN2706JE incorporates a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ.

Is the RN2706JE compatible with the RN1706JE?

Yes, the RN2706JE is the PNP complement to the RN1706JE NPN transistor, both sharing the same package and general application scope.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at -50 V.