RN2706,LF

Overview

The RN2706,LF is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into a USV (ultra super mini type) package featuring five leads. The device is designed for switching, inverter, interface, and driver circuits. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a maximum collector current (IC) of -100 mA, and a total power dissipation (PC) of 200 mW. The transition frequency (fT) is typically 200 MHz at VCE = -10 V and IC = -5 mA. The internal bias resistors are configured as R1 = 4.7 kΩ and R2 = 47 kΩ.

Feature Summary

• Integrates two PNP transistors with built-in bias resistors to simplify circuit design.
• Reduces component count and manufacturing process steps while enabling equipment miniaturization.
• Utilizes a compact USV package with five leads for surface mount applications.

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as reel or cut tape configuration. Ensure compliance with RoHS directives and environmental regulations applicable to your region before procurement. Confirm that the intended application does not fall under Toshiba's restrictions for unintended use, including nuclear, aerospace, or medical systems requiring extraordinary reliability.

Selection Notes

Select the RN2706,LF when a dual PNP BRT with an R1/R2 ratio of approximately 0.1 is required. Compare its -50 V rating and -100 mA current capacity against circuit demands. Consider the USV package size constraints and verify that the 200 mW total power dissipation limit accommodates the thermal conditions of the target application without exceeding the junction temperature rating.

Part Context

The RN2706,LF belongs to the RN2701 through RN2706 series of silicon PNP epitaxial type bias resistor built-in transistors. These devices share the same USV package and general electrical characteristics but differ in their internal bias resistor values. This series serves as the complementary counterpart to the NPN-based RN1701 to RN1706 series, offering designers paired options for various resistance configurations within the same footprint.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing with other manufacturers requires independent verification of pinout compatibility, electrical ratings, and package dimensions.