RN2707JE(TE85L,F)

Overview

The RN2707JE(TE85L,F) is a dual PNP bias resistor built-in transistor (BRIT) manufactured by Toshiba Semiconductor and Storage. It integrates two NPN-type transistors with internal bias resistors into an ESV-5 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a transition frequency of 200 MHz. The device features a typical input resistance of 22 kOhms and a DC current gain (hFE) minimum of 120. Power dissipation is rated at 100 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to reduce external component count.
• Utilizes the ESV-5 ultra-small surface mount package for compact circuit board layouts.
• Designed for high-speed switching applications with a 200 MHz transition frequency.

Applications

• Switching circuits in portable electronic devices
• Inverter logic circuits
• Interface driver circuits

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's official datasheet to confirm packaging type and lead-free compliance. Ensure the ESV-5 footprint matches the design layout. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. Compare the 22 kOhm base resistance value against circuit requirements. Verify that the 100 mW power dissipation rating suffices for the intended thermal environment and duty cycle.

Part Context

This part belongs to Toshiba's RN27xx series of Bias Resistor Built-In Transistors. These components are designed to simplify circuit design by replacing discrete transistors and base resistors with a single packaged unit. The series offers various resistance combinations to suit different drive conditions.

Replacement Considerations

Check for direct equivalents within the RN27xx series or other manufacturers' dual PNP BRITs in the ESV-5 package. Ensure pinout compatibility and matching electrical ratings such as VCEO and IC before substitution.

FAQ

What is the internal resistor configuration for the RN2707JE?

The RN2707JE typically incorporates a 22 kOhm base resistor (R1) connected to each of the two PNP transistors.

What is the maximum operating junction temperature?

The maximum operating temperature is specified as +150°C.

Is this component RoHS compliant?

Yes, the TE85L,F suffix indicates a lead-free product compliant with RoHS standards.