RN2707,LF

Overview

The RN2707,LF is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN bipolar junction transistors with internal base and emitter resistors in a compact surface-mount package. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 100mA per element. Internal biasing resistors are specified as 47 kΩ for the base (R1) and 22 kΩ for the emitter (R2). Key electrical characteristics include a DC current gain (hFE) of at least 70 at 10mA and 5V, a saturation voltage of 300mV max at 250µA base current, and a transition frequency of 200MHz. The component operates within a power dissipation limit of 200mW.

Feature Summary

• Dual NPN configuration with integrated base and emitter resistors for simplified circuit design
• High-speed switching capability supported by a 200MHz transition frequency
• Low saturation voltage to minimize power loss during conduction
• Compact surface-mount packaging suitable for space-constrained applications

Applications

• General-purpose switching circuits requiring dual complementary or parallel NPN control
• Logic interface buffers between microcontrollers and load drivers
• Pre-biased driver stages for relay or LED arrays
• Digital signal processing output stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and resistance values. Ensure the procurement channel provides traceable documentation confirming RoHS3 compliance. Cross-reference the part number with Toshiba Semiconductor and Storage catalogs to validate current production status and availability before finalizing supply chain agreements.

Selection Notes

Select this component when a dual NPN solution with fixed biasing is required to reduce external component count. Verify that the 47kΩ base and 22kΩ emitter resistor values align with the target logic levels and drive requirements. Confirm that the 50V voltage rating and 100mA current capacity exceed the maximum operational stresses of the intended application environment.

Part Context

The RN2707,LF belongs to the RN series of pre-biased transistor arrays produced by Toshiba Semiconductor and Storage. This series combines discrete transistors with precision resistors to offer a compact alternative to discrete designs. The 'LF' suffix typically denotes lead-free and halogen-free compliance, adhering to environmental standards such as RoHS3. It serves as a functional counterpart to other dual transistor arrays in the same product family.

Replacement Considerations

Publicly confirmed substitute part numbers for the RN2707,LF were not identified in available verified sources. Engineers should consult Toshiba Semiconductor and Storage technical support or authorized distributor databases for qualified alternatives that match the USV package and electrical specifications.