RN2708JE(TE85L,F)

RN2708JE(TE85L,F)

$0.32
  • Description:TRANS 2PNP PREBIAS 0.1W ESV
  • Series:-

SKU:392bfecd3c9f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.1W ESV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:ESV

Download product information

RN2708JE(TE85L,F)

Overview

The RN2708JE(TE85L,F) is a dual PNP pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in an ESV-5 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current of -100 mA, and a power dissipation (Pd) of 100 mW. The device features a minimum DC current gain (hFE) of 120 and operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates dual PNP transistors with built-in bias resistors for simplified circuit design
  • Utilizes compact ESV-5 surface-mount packaging for space-efficient applications
  • Supports high-temperature operation up to 150°C junction temperature

Applications

  • Switching circuits requiring integrated biasing
  • Interface connection drivers
  • Inverter control logic

Procurement Notes

Verify the specific suffix TE85L,F confirms the reel packaging format and lead-free compliance status. Confirm RoHS directive adherence through official manufacturer documentation prior to integration. Ensure supply chain sources provide valid traceability records for automotive or industrial qualification requirements.

Selection Notes

Select this component when dual PNP switching with integrated biasing is required in a small footprint. The 100 mW power rating suits low-power signal applications. Verify that the -50 V voltage rating meets the specific circuit load requirements. Consider the ESV-5 package dimensions for PCB layout constraints.

Part Context

This part belongs to Toshiba's RN series of pre-biased digital transistors. These devices combine bipolar transistors with internal resistor networks to reduce external component count. The JE suffix typically indicates specific resistance values or configurations within the dual PNP family.

Replacement Considerations

RN2704JE(TE85L,F)

FAQ

What is the typical input resistance configuration?

The datasheet specifies typical input resistance values for the integrated bias network, though exact ohmic values depend on the specific variant within the JE series.

Is this component suitable for automotive applications?

Toshiba offers AEC-Q101 qualified variants within the RN series; verify if this specific part number holds automotive certification through official documentation.

RN2708JE(TE85L,F)RN2708JE(TE85L,F)
$0.32
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