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The RN2708JE(TE85L,F) is a dual PNP pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in an ESV-5 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current of -100 mA, and a power dissipation (Pd) of 100 mW. The device features a minimum DC current gain (hFE) of 120 and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix TE85L,F confirms the reel packaging format and lead-free compliance status. Confirm RoHS directive adherence through official manufacturer documentation prior to integration. Ensure supply chain sources provide valid traceability records for automotive or industrial qualification requirements.
Select this component when dual PNP switching with integrated biasing is required in a small footprint. The 100 mW power rating suits low-power signal applications. Verify that the -50 V voltage rating meets the specific circuit load requirements. Consider the ESV-5 package dimensions for PCB layout constraints.
This part belongs to Toshiba's RN series of pre-biased digital transistors. These devices combine bipolar transistors with internal resistor networks to reduce external component count. The JE suffix typically indicates specific resistance values or configurations within the dual PNP family.
RN2704JE(TE85L,F)
The datasheet specifies typical input resistance values for the integrated bias network, though exact ohmic values depend on the specific variant within the JE series.
Toshiba offers AEC-Q101 qualified variants within the RN series; verify if this specific part number holds automotive certification through official documentation.