RN2708,LF

Overview

The RN2708,LF is a dual pre-biased PNP bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a transition frequency of 200MHz and a maximum power dissipation of 200mW. Internal resistor values are specified as 4.7kΩ for the base series resistor and 47kΩ for the base-emitter resistor per transistor. The component utilizes a 5-TSSOP, SC-70-5, or SOT-353 (USV) package.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to simplify circuit design
• Optimized for high-speed switching applications with a 200MHz transition frequency
• Compact surface-mount packaging facilitates automated assembly and space-constrained layouts

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct internal resistor configurations and tape-and-reel specifications. Confirm that the requested part number matches the exact pinout and electrical characteristics required for the target application. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards and RoHS directives before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required to reduce external component count. Ensure the 50V voltage rating and 100mA current limit align with the load requirements. Verify that the USV package dimensions fit within the available PCB area. Consider the thermal performance relative to the 200mW power dissipation limit under expected operating conditions.

Part Context

The RN2708 belongs to Toshiba's family of Bias Resistor Built-in Transistors (BRT). These devices combine a single or dual BJT with one or two resistors on a single silicon chip. This integration reduces board space, simplifies soldering processes, and improves circuit reliability compared to discrete implementations. The RN2708 specifically provides a dual PNP solution for general-purpose switching tasks.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the dual PNP topology, 50V VCEO rating, 100mA IC rating, and compatible SOT-353/USV footprint. Verify that internal resistor values match the original design requirements to prevent biasing issues.