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The RN2709JE(TE85L,F) is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two independent PNP transistors with internal bias resistors into an ESV-5 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage of -50 V, a continuous collector current of -100 mA, and a transition frequency of 200 MHz. The device features a typical input resistance of 22 kOhms and a minimum DC current gain (hFE) of 120. Power dissipation is rated at 100 mW, with an operating temperature range from -55°C to +150°C.
Verify the complete part number including the TE85L,F suffix to ensure correct tape-and-reel packaging and lead-free compliance. Confirm RoHS status and moisture sensitivity level requirements against specific manufacturing standards before ordering. Cross-reference distributor datasheets to validate the ESV-5 package dimensions and pinout configuration for PCB layout accuracy.
Select this component when a dual PNP BRT solution is required with a 22 kOhm base resistor value. Ensure the application voltage does not exceed the 50 V collector-emitter rating and current demands remain within the 100 mA limit. Consider the 100 mW power dissipation constraint and thermal management needs for the small ESV-5 package during high-frequency operation.
This part belongs to Toshiba's RN27xx series of dual PNP bias resistor built-in transistors. The series offers various resistor combinations to suit different drive requirements. The TE85L,F designation indicates standard reel packaging and environmental compliance. It serves as a direct replacement for discrete resistor-transistor networks in digital logic interfaces.
The RN2709JE(TE85L,F) may be substituted with other dual PNP BRTs having identical pinouts and similar electrical ratings. Verify that alternative components match the 22 kOhm base resistor value and 50 V voltage rating. Check package compatibility with the existing ESV-5 footprint to avoid rework.