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The RN2709,LF is a dual PNP pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal base and emitter resistors (R1=47kΩ, R2=22kΩ) into a compact USV package (5-TSSOP/SC-70-5/SOT-353). The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a transition frequency of 200MHz, a minimum DC current gain (hFE) of 70 at 10mA/5V, and a maximum power dissipation of 200mW. It operates within a temperature range of -40°C to 85°C and features low saturation voltage.
Verify the specific suffix variant against the original manufacturer datasheet to ensure compatibility with required resistance values and package dimensions. Confirm RoHS compliance status and moisture sensitivity level prior to procurement. Check for obsolescence notices as component availability may vary across distributors.
Select this component when a dual PNP configuration with fixed biasing is required to reduce external component count. Ensure the 100mA current rating and 50V voltage limit meet the load requirements. Consider the USV package size constraints during PCB layout planning.
The RN2709 belongs to Toshiba's RN series of digital transistors, which are designed to replace discrete resistor-transistor networks. This series offers consistent performance and reduced assembly complexity compared to individual components. The LF suffix indicates lead-free composition compliant with environmental standards.
Direct substitutes must match the dual PNP configuration, 47kΩ/22kΩ resistor values, and USV package. Verify equivalent hFE and Vce(sat) specifications to ensure functional parity in existing designs.