RN2710JE(TE85L,F)

Overview

The RN2710JE(TE85L,F) is a Silicon PNP Epitaxial Type Bias Resistor Built-in Transistor manufactured by Toshiba Semiconductor and Storage. It incorporates two devices into an Extreme-Super-Mini (5-pin) package. The component features a collector-emitter voltage of -50 V, a collector current of -100 mA, and a collector power dissipation of 100 mW. The input resistor value is typically 4.7 kΩ. Electrical characteristics include a DC current gain of 120 to 400 at -1 mA and a transition frequency of 200 MHz.

Feature Summary

• Incorporates a bias resistor into the transistor to reduce parts count
• Two devices are integrated into an Extreme-Super-Mini (5-pin) package
• Reduces assembly cost and enables compact equipment manufacturing

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific TE85L tape-and-reel suffix against official Toshiba documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure design reliability aligns with the Toshiba Semiconductor Reliability Handbook guidelines for continuous heavy loads.

Selection Notes

Select this component when a compact PNP solution with built-in biasing is required for switching or driver applications. Verify that the 4.7 kΩ input resistor matches the circuit design requirements. Consider the complementary RN1710JE series if NPN configurations are needed for the same application architecture.

Part Context

This part belongs to the RN2710JE/RN2711JE family of Silicon PNP Epitaxial Type transistors utilizing the PC T Process. It is designed as a complement to the RN1710JE and RN1711JE series. The device integrates two transistors into a single small outline package to facilitate space-constrained designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.