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The RN2710,LF is a dual pre-biased PNP transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a USV (5-lead ultra super mini) surface-mount package. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a transition frequency of 200 MHz. The DC current gain is specified at a minimum of 120 @ -1 mA, -5 V. Each transistor features an internal base resistor (R1) of 4.7 kΩ. The device has a maximum power dissipation of 200 mW and operates within a junction temperature range up to 150 °C.
Verify the specific ordering suffix against official distributor catalogs to ensure correct packaging format, such as tape and reel quantities. Confirm RoHS compliance status directly with the manufacturer or authorized suppliers prior to procurement. Ensure storage conditions adhere to the specified moisture sensitivity level requirements during handling.
Select this component when a compact dual PNP solution with integrated biasing is required. Verify that the 4.7 kΩ internal base resistance aligns with the target drive current and logic interface levels. Ensure the operating voltage does not exceed the -50 V collector-emitter rating under all transient conditions.
The RN2710 belongs to Toshiba's RN series of pre-biased transistors. It serves as a complementary counterpart to the NPN RN1710 model. This series is designed to replace discrete resistor-transistor combinations, thereby reducing board space and assembly complexity in modern electronic designs.
Direct functional substitutes may include other dual PNP pre-biased arrays from various manufacturers, provided they match the USV package footprint and electrical ratings. Verify pinout compatibility and resistance values before substitution.