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Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.1W ESV
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200MHz
- Power - Max：100mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-553
- Supplier Device Package：ESV
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Overview
The RN2711JE is a Silicon PNP Epitaxial Type Bias Resistor Built-in Transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two devices into an Extreme-Super-Mini 5-pin package, incorporating bias resistors to reduce component count. The collector-emitter voltage rating is -50 V, with a maximum collector current of -100 mA and power dissipation of 100 mW. The transition frequency is typically 200 MHz. The built-in input resistor value for the RN2711JE ranges from 7 kΩ to 13 kΩ.
Feature Summary
- Integrates two PNP transistors and bias resistors within a single compact 5-pin package.
- Reduces printed circuit board space requirements and assembly costs by eliminating external base resistors.
- Offers complementary functionality to the NPN RN1711JE device.
Applications
- Switching circuits
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging details and compliance status. Ensure that the design accounts for derating concepts outlined in the Toshiba Semiconductor Reliability Handbook to maintain reliability under heavy loads or temperature variations.
Selection Notes
Select this component when a dual PNP BRT configuration is required for interface or driver applications. Compare the 7 kΩ to 13 kΩ internal resistor range against circuit requirements. Verify compatibility with the RN1711JE if a complementary NPN/PNP pair is needed for push-pull or differential signaling designs.
Part Context
This component belongs to the RN2710JE/RN2711JE series of Bipolar Junction Transistor arrays. These devices are designed as pre-biased transistors to simplify digital logic interfacing. The JE marking indicates the specific resistor tolerance and value variant within the product line.
Replacement Considerations
The RN2710JE serves as the direct complementary counterpart within the same series. Designers requiring an NPN equivalent should consider the RN1711JE(TE85L,F). Verify pinout and electrical characteristics before substituting with generic BRTs from other manufacturers.
FAQ
What is the typical transition frequency of the RN2711JE?
The typical transition frequency (fT) is 200 MHz at a collector-emitter voltage of -10 V and collector current of -5 mA.
How does the RN2711JE differ from the RN2710JE?
The primary difference lies in the value of the built-in input resistor (R1). The RN2711JE features a resistor range of 7 kΩ to 13 kΩ, whereas the RN2710JE has a range of 3.29 kΩ to 6.11 kΩ.
What is the maximum collector-base voltage rating?
The absolute maximum collector-base voltage (VCBO) rating is -50 V at an ambient temperature of 25°C.
