SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The RN2711,LF is a dual PNP epitaxial planar silicon transistor with built-in bias resistors in a USV (ultra super mini type) 5-lead surface-mount package. It integrates two complementary devices to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 200 mW. The DC current gain ranges from 120 to 400 at -1 mA, with a transition frequency of 200 MHz. Each transistor features an internal base resistor (R1) with a nominal value of 10 kΩ.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging format and compliance status. Ensure that the selected variant matches the required resistance tolerance and thermal characteristics for the intended application environment before finalizing procurement orders.
Select the RN2711,LF when a dual PNP configuration with integrated biasing is required for space-constrained designs. Compare the 10 kΩ internal resistor value against circuit requirements; if different resistance values are needed, consider the RN2710 model which utilizes a 4.7 kΩ resistor. Verify that the operating conditions remain within the absolute maximum ratings to ensure reliability.
The RN2711 belongs to a family of pre-biased transistors manufactured using Toshiba's PCT process. It serves as a complementary counterpart to the NPN RN1711 device. The series is designed to replace discrete transistor and resistor combinations, offering a standardized solution for logic interface and switching applications requiring minimal board space.
The RN2710 is a direct functional alternative within the same package, differing only in the internal base resistor value (4.7 kΩ vs 10 kΩ). Cross-referencing with other manufacturers requires verifying pinout compatibility and ensuring equivalent saturation voltage and current gain specifications.