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The RN2711(TE85L,F) is a dual PNP digital transistor from Toshiba, housed in a USV-5 package. It integrates two transistors with built-in bias resistors to simplify circuit design and reduce component count. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a power dissipation (PC) of 200 mW. The typical input resistor value is 10 kΩ, with a minimum DC current gain (hFE) of 120 at IC = -1 mA. The transition frequency (fT) is typically 200 MHz.
Verify the specific part number suffix against official Toshiba documentation to ensure correct packaging and resistance values. Confirm RoHS compliance status through authorized distributors or direct manufacturer channels before procurement. Ensure storage and operating temperature ranges align with the target application environment.
Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. Compare the 10 kΩ input resistor specification against alternative models like the RN2710 if different biasing ratios are needed. Verify that the -50 V voltage rating and -100 mA current limits meet the system requirements.
This device belongs to the RN2710/RN2711 series of silicon PNP epitaxial transistors utilizing Toshiba's PCT process. It serves as the complementary counterpart to the NPN RN1710 and RN1711 series, offering matched performance characteristics for push-pull or differential applications within compact surface-mount footprints.
Direct substitutes may include other dual PNP BRTs in USV packages from various manufacturers. Verify pinout compatibility and electrical parameter equivalence, particularly regarding saturation voltage and cutoff currents, before implementing any cross-brand replacement.