RN2712JE(TE85L,F)

RN2712JE(TE85L,F)

$0.31
  • Description:TRANS 2PNP PREBIAS 0.1W ESV
  • Series:-

SKU:92ae8422fdb8 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.1W ESV
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-553
  • Supplier Device Package:ESV

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RN2712JE(TE85L,F)

Overview

The RN2712JE(TE85L,F) is a dual PNP bias resistor built-in transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with internal bias resistors into an ESV-5 (USV) package, reducing component count and assembly costs. The device features a typical input resistance of 22 kΩ per channel. Key electrical parameters include a collector-emitter voltage rating of -50 V, a continuous collector current of -100 mA, and a power dissipation of 100 mW. The transition frequency reaches 200 MHz, with a minimum DC current gain of 120.

Feature Summary

  • Dual configuration incorporating two PNP transistors within a single five-pin package to minimize board space.
  • Built-in bias resistors eliminate the need for external base resistors, simplifying circuit design and lowering assembly costs.
  • High-speed switching capability supported by a transition frequency of up to 200 MHz.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix TE85L against the manufacturer's latest documentation to confirm packaging details such as reel size or tape specifications. Ensure compliance with environmental directives like RoHS by checking the official datasheet status. Confirm that the application environment remains within the specified junction temperature range of 150°C to maintain reliability standards.

Selection Notes

Select this component when a compact dual PNP solution with integrated biasing is required for high-speed digital applications. The 22 kΩ input resistance suits standard logic interface levels. Consider the 100 mW total power dissipation limit for thermal management in dense PCB layouts. Verify that the -50 V voltage rating aligns with the system's maximum operating voltages.

Part Context

This part belongs to Toshiba's RN27xx series of Bias Resistor Built-In Transistors (Digital Transistors). These devices are designed to replace discrete transistor-resistor combinations. The RN2712JE specifically denotes the variant with a nominal 22 kΩ input resistance, distinguishing it from other values in the same family.

Replacement Considerations

Direct substitutes within the same family include the RN2713JE, which features a different input resistance value (47 kΩ). Other dual PNP digital transistors from various manufacturers may serve as alternatives if pin compatibility and electrical ratings match, though internal resistor tolerances should be verified.

RN2712JE(TE85L,F)RN2712JE(TE85L,F)
$0.31
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