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The RN2713JE(TE85L,F) is a PNP Bias Resistor Built-in Transistor (BRT) from Toshiba Semiconductor and Storage. It integrates a single PNP transistor with an internal base resistor into an Extreme-Super-Mini 5-pin package. The device features a collector-emitter voltage rating of -50 V, a collector current capacity of -100 mA, and a DC current gain ranging from 120 to 400. The typical input resistance value is 47 kΩ. Designed for surface mount applications, it supports junction temperatures up to 150 °C and operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix TE85L against official Toshiba documentation to confirm packaging details such as tape and reel specifications. Ensure compliance with RoHS directives and intended use restrictions before procurement. Confirm that the application environment remains within the specified absolute maximum ratings to maintain reliability.
Select this component when a compact PNP solution with integrated biasing is required. The 47 kΩ internal resistor value suits standard logic interface applications. Verify that the required collector current does not exceed 100 mA and that the operating voltage stays below the 50 V limit. Consider thermal derating if operating near the maximum junction temperature.
This part belongs to the RN271xJE series of BRTs manufactured by Toshiba Semiconductor and Storage. It shares the same physical package and general electrical characteristics as the RN2712JE, differing primarily in the internal base resistance value. The series is designed for space-constrained designs requiring simplified biasing networks.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing with other manufacturers requires matching the PNP configuration, 50V rating, 100mA current, and similar resistance values.