RN2714,LF

RN2714,LF

  • Description:PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
  • Series:-

SKU:9a5eb0f5aabf Category: Brand:

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Product Detailed Parameters

  • Description:PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):1kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:USV

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RN2714,LF

Overview

The RN2714,LF is a dual PNP bias resistor built-in transistor (BRT) manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with base resistors in a compact surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA per element. The device features an internal base resistor configuration with R1 at 1kΩ for Q1 and R1 at 10kΩ for Q2. It operates within a junction temperature range up to 150°C and is designed for high-speed switching applications with a transition frequency of 200MHz.

Feature Summary

  • Integrates two PNP transistors with dedicated base bias resistors in a single package
  • Optimized for high-speed switching with a 200MHz transition frequency
  • Compact surface-mount packaging reduces board space requirements
  • Simplifies circuit design by eliminating external base resistors

Applications

  • Switching circuits for general-purpose logic interfaces
  • Driver circuits for small-signal loads
  • Level shifting applications in digital systems
  • Inverter circuits requiring compact pre-biased solutions

Procurement Notes

Verify the specific suffix and tape/reel specifications against the official Toshiba datasheet before ordering. Confirm that the requested quantity aligns with standard packaging options provided by authorized distributors. Ensure compatibility with automated pick-and-place equipment if applicable. Cross-reference the manufacturer part number with the latest revision history to confirm component availability and lifecycle status.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required for space-constrained designs. The RN2714,LF offers distinct resistance values for each transistor, allowing tailored biasing for different signal paths. Consider the 50V rating and 100mA current limit to ensure adequate headroom for the target application. Evaluate the USV package dimensions against available PCB footprint constraints.

Part Context

This component belongs to Toshiba's RN series of Bias Resistor Built-in Transistors, which are designed to simplify digital circuit design. These devices replace discrete transistor and resistor networks, reducing component count and assembly time. The RN2714,LF specifically addresses applications needing dual PNP switching capabilities with fixed biasing, commonly found in consumer electronics and industrial control modules.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Generic BRT replacements may not match the specific internal resistor ratios or switching characteristics. Verify pinout compatibility and thermal performance before implementing any alternative part numbers.

RN2714,LFRN2714,LF

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