RN2901FE,LXHF(CT

Overview

The RN2901FE,LXHF(CT is a dual pre-biased NPN bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in biasing resistors within an ES6 surface-mount package, designed for compact circuit layouts. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element. The device features a DC current gain (hFE) of at least 80 when tested at 10mA and 5V. Internal base resistance is specified at 4.7 kΩ, while the emitter resistor is 47 kΩ. The unit supports a transition frequency of 200MHz and has a maximum power dissipation rating of 200mW.

Feature Summary

• Integrates dual NPN transistors with fixed internal biasing resistors to simplify circuit design
• Utilizes a compact ES6 surface-mount package for space-constrained applications
• Provides high-speed switching capabilities suitable for digital logic interfacing

Applications

• Digital logic level shifting and interface circuits
• Switching applications in portable electronic devices
• General-purpose amplification stages requiring integrated biasing

Procurement Notes

Verify the specific suffix LXHF against the manufacturer's official documentation to confirm compliance with RoHS3 directives and lead-free status. Ensure the ordering code matches the exact tape-and-reel or cut-tape packaging requirements for your assembly line. Cross-reference the ES6 package dimensions with your PCB footprint library to guarantee mechanical compatibility before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. The 50V rating and 100mA current capacity make it suitable for low-to-medium power switching tasks. Compare the 200mW power dissipation limit against your thermal management strategy to ensure reliable operation under expected load conditions without exceeding junction temperature limits.

Part Context

This part belongs to the RN29xx series of pre-biased transistor arrays from Toshiba Semiconductor and Storage. These devices are engineered to replace multiple discrete components, including transistors and resistors, thereby saving board space. The FE variant specifically denotes the NPN configuration housed in the ES6 package, distinguishing it from PNP counterparts or different package styles within the same functional family.

Replacement Considerations

Consult official cross-reference lists for verified equivalents such as the RN2901FE,LF(CT. Confirm that any substitute maintains identical pinout, voltage ratings, and hFE characteristics to ensure direct compatibility without redesigning the surrounding circuitry.