RN2901FE(TE85L,F)

Overview

The RN2901FE(TE85L,F) is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES-6 surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a transition frequency (fT) of 250 MHz. The device features a typical base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 47 kΩ, resulting in a resistance ratio of approximately 1.0. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Integrates dual NPN transistors with fixed bias resistors to reduce component count and simplify circuit design.
• High-speed switching capability supported by a transition frequency of 250 MHz.
• Compact ES-6 surface-mount package suitable for space-constrained applications.

Applications

• General-purpose switching circuits requiring compact dual-transistor solutions.
• Logic interface circuits for level shifting between different voltage domains.
• Driver stages for small-signal loads in consumer electronics.

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's latest datasheet to confirm packaging format and lead-free compliance. Check current availability status as product lifecycles may change. Ensure the ES-6 package footprint matches the target PCB layout before ordering.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required for high-frequency switching. Compare the 47 kΩ internal resistance values against external resistor alternatives to ensure proper base drive currents. Verify that the 200 mW power dissipation rating accommodates the thermal conditions of the final assembly.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which combine bipolar junction transistors with bias resistors. The FE suffix typically denotes specific resistance values within the series. The ES-6 package is a standard small-outline form factor used for various low-power discrete semiconductor devices.

Replacement Considerations

Direct substitutes must match the dual NPN configuration, 50V VCEO, 100mA IC, and ES-6 package. Verify equivalent resistance ratios and transition frequencies. Cross-reference with other manufacturers' dual BRT arrays offering similar electrical characteristics and pinouts.