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The RN2901,LF(CT is a dual pre-biased BJT array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal biasing resistors are configured with R1 at 47kΩ and R2 at 47kΩ for both transistors. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz, with a maximum power dissipation of 200mW.
Verify the specific suffix designation against official Toshiba documentation to confirm pinout compatibility and internal resistor values. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the ordering information matches the exact package type and tape-and-reel specifications required for your manufacturing equipment.
Select this component when a matched pair of NPN and PNP transistors with identical biasing characteristics is required in a minimal footprint. The integrated resistors eliminate the need for external components, reducing board space and assembly complexity. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements of the target application circuit.
This part belongs to the Toshiba RN series of digital transistors, which are designed as direct replacements for discrete resistor-transistor networks. The RN2901 specifically provides a complementary pair, offering symmetry for applications requiring balanced NPN/PNP performance. It is part of a broader family including variants with different resistor ratios and packaging options.
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the same US6 package dimensions, pin configuration, and internal resistor values to guarantee mechanical and electrical compatibility without redesigning the host circuit.