RN2901,LF(CT

RN2901,LF(CT

$0.19
  • Description:PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
  • Series:-

SKU:6860625560d7 Category: Brand:

  
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Product Detailed Parameters

  • Description:PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):4.7kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN2901,LF(CT

Overview

The RN2901,LF(CT is a dual pre-biased BJT array manufactured by Toshiba Semiconductor and Storage. It integrates one NPN and one PNP transistor within a single US6 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Internal biasing resistors are configured with R1 at 47kΩ and R2 at 47kΩ for both transistors. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA and 5V, and a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz, with a maximum power dissipation of 200mW.

Feature Summary

  • Integrates complementary NPN and PNP bipolar junction transistors in a compact dual configuration
  • Includes built-in biasing resistors to simplify circuit design and reduce component count
  • Optimized for high-speed switching applications with specified transition frequencies

Applications

  • General-purpose digital switching circuits
  • Driver stages for logic interfaces
  • Complementary push-pull output configurations

Procurement Notes

Verify the specific suffix designation against official Toshiba documentation to confirm pinout compatibility and internal resistor values. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the ordering information matches the exact package type and tape-and-reel specifications required for your manufacturing equipment.

Selection Notes

Select this component when a matched pair of NPN and PNP transistors with identical biasing characteristics is required in a minimal footprint. The integrated resistors eliminate the need for external components, reducing board space and assembly complexity. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements of the target application circuit.

Part Context

This part belongs to the Toshiba RN series of digital transistors, which are designed as direct replacements for discrete resistor-transistor networks. The RN2901 specifically provides a complementary pair, offering symmetry for applications requiring balanced NPN/PNP performance. It is part of a broader family including variants with different resistor ratios and packaging options.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement maintains the same US6 package dimensions, pin configuration, and internal resistor values to guarantee mechanical and electrical compatibility without redesigning the host circuit.

RN2901,LF(CTRN2901,LF(CT
$0.19
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