RN2901,LXHF(CT

Overview

The RN2901,LXHF(CT is a pre-biased bipolar transistor array manufactured by Toshiba Semiconductor and Storage. It contains two PNP transistors in a single US-6 (SOT-363) surface-mount package. The device features a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Each transistor includes an integrated base resistor with a typical value of 4.7 kOhms. The power dissipation rating is 200 mW, and the maximum operating temperature reaches +150°C. It is qualified under AEC-Q101 standards for automotive applications.

Feature Summary

• Integrates dual PNP transistors with built-in bias resistors to simplify circuit design and reduce component count.
• Qualified for automotive use under AEC-Q101 standards, ensuring reliability in demanding environments.
• Supports high-temperature operation up to +150°C, suitable for various industrial and automotive thermal conditions.

Applications

• Automotive electronic control units requiring reliable switching components.
• General-purpose logic level translation and switching circuits.
• Driver stages for low-power loads in consumer electronics.

Procurement Notes

Verify the specific suffix LXHF(CT) against the manufacturer's latest datasheet to confirm packaging details and tape-and-reel specifications. Ensure that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements. Cross-reference the US-6 package dimensions with your PCB footprint to guarantee mechanical compatibility during assembly.

Selection Notes

Select this component when a dual PNP configuration with fixed 4.7 kOhm base resistors is required. Consider the -50 V voltage rating and -100 mA current limit to ensure adequate headroom for the target application. The SMD form factor supports automated surface-mount assembly processes, making it suitable for high-volume manufacturing environments.

Part Context

This part belongs to Toshiba's RN series of pre-biased transistors, which integrate resistors directly onto the silicon die. The RN2901 variant specifically offers a dual PNP structure within a compact US-6 package. This series is designed to replace discrete resistor-transistor combinations, offering space savings and improved performance consistency compared to separate components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult Toshiba's official cross-reference guides or contact technical support for verified alternatives that match the electrical parameters and package type.