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The RN2902FE,LF(CT is a dual pre-biased PNP transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a compact surface-mount package. Key electrical parameters include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a minimum DC current gain (hFE) of 50 at 10mA and 5V, with a saturation voltage of 300mV max at 250µA base current and 5mA collector current. Internal bias resistors are specified as R1=10kΩ and R2=10kΩ. The transition frequency is 200MHz, and the maximum power dissipation is 200mW.
Verify the specific suffix LF(CT against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering code matches the required tape and reel or cut tape configuration for your assembly line. Cross-reference the internal part number with official Toshiba documentation to avoid counterfeit components.
Select this component when a dual PNP pre-biased configuration is required in a small footprint. Verify that the 10kΩ internal resistor values align with the target logic levels and drive requirements. Confirm that the 50V voltage rating and 100mA current capacity meet the application's peak load conditions without exceeding the 200mW power dissipation limit.
This part belongs to Toshiba's RN series of digital transistors, which combine bipolar junction transistors with integrated bias networks. The RN2902 variant specifically provides a dual PNP configuration, contrasting with NPN-only or complementary NPN/PNP pairs found in other series members like the RN4902.
Direct substitutes may include RN2902 variants from Toshiba with identical electrical characteristics but different packaging suffixes. Other manufacturers offering dual PNP pre-biased transistors in SOT-363 packages require careful verification of hFE, Vce(sat), and internal resistor tolerances.