RN2902FE(T5L,F,T)

Overview

The RN2902FE(T5L,F,T) is a dual NPN pre-biased transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in a compact surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 50V, a maximum continuous collector current (IC) of 100mA, and a transition frequency (fT) of 200MHz. The device features a typical DC current gain (hFE) of 80 at IC=10mA and VCE=5V, with a saturation voltage (VCEsat) of 300mV max at IB=250µA and IC=5mA. Power dissipation is rated at 200mW. The integrated base resistor (R1) is typically 4.7kΩ and the emitter resistor (R2) is typically 47kΩ. It operates within a temperature range of -40°C to +150°C junction temperature.

Feature Summary

• Dual NPN configuration with integrated bias resistors simplifies circuit design by reducing component count and board space.
• High-speed switching capability supported by a 200MHz transition frequency suitable for digital logic applications.
• Automotive-grade qualification ensures reliability under varying thermal conditions and operational stresses.

Applications

• Digital logic level shifting and interface circuits in automotive infotainment systems.
• Switching applications in engine control units (ECUs) requiring high reliability.
• General-purpose digital buffering and inversion in industrial control modules.

Procurement Notes

Verify the specific suffix T5L,F,T against official Toshiba documentation to confirm tape-and-reel packaging and automotive grade status. Ensure compatibility with RoHS3 directives if required by your manufacturing standards. Cross-reference the full part number with authorized distributors to avoid counterfeit components, as suffix variations can indicate different packaging or qualification levels.

Selection Notes

Select this component when a dual NPN pre-biased transistor is needed for space-constrained designs. The 50V rating and 100mA current capacity suit low-power digital switching tasks. Compare R1/R2 ratios with other RN29xx series variants to match specific drive requirements. Confirm that the US6/ES6 package footprint aligns with your PCB layout constraints and thermal management strategy.

Part Context

This part belongs to Toshiba's RN29xx series of digital transistors, which are designed to replace discrete resistor-transistor networks. The FE suffix typically denotes an automotive-grade variant with enhanced quality control and reliability testing compared to standard commercial grades. These devices are widely used in automotive electronics due to their robustness and compact form factor.

Replacement Considerations

Direct substitutes may include other RN2902 variants from Toshiba or equivalent dual NPN pre-biased transistors from manufacturers like ON Semiconductor or ROHM. Verify pinout compatibility, especially regarding the placement of internal resistors, as configurations can vary between vendors. Ensure replacement parts meet the same AEC-Q101 qualification standards if used in automotive applications.