RN2902,LF

Overview

The RN2902,LF is a dual pre-biased bipolar junction transistor (BJT) array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a compact US6 surface-mount package. The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Key electrical characteristics include a DC current gain (hFE) of at least 50 at 10mA and 5V, with a maximum saturation voltage of 300mV at 250µA base current and 5mA collector current. The transition frequency is rated at 200MHz, and the maximum power dissipation is 200mW.

Feature Summary

• Integrates two PNP transistors with built-in bias resistors to simplify circuit design
• Reduces component count and manufacturing process steps compared to discrete solutions
• Suitable for switching, inverter, interface, and driver circuit applications

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific ordering suffix and packaging type when sourcing, as availability may vary between cut tape, reel, or other formats. Confirm the part status, as this model may be subject to discontinuation or lifecycle changes. Ensure the supplier provides official documentation to validate authenticity and specifications before integration into production designs.

Selection Notes

Select this component for applications requiring dual PNP switching with integrated biasing in a small footprint. The 10kΩ typical bias resistors are suitable for standard logic interface levels. Consider the 200mW power dissipation limit and thermal constraints during PCB layout. Verify that the 50V voltage rating meets the system requirements for both collector-emitter and collector-base voltages.

Part Context

The RN2902 belongs to Toshiba's RN series of digital transistors with built-in bias resistors. This series is designed to replace multiple discrete components, including transistors and resistors, thereby reducing board space and assembly costs. The US6 package offers a compact solution for high-density electronic designs.

Replacement Considerations

Check for direct pin-compatible alternatives within the same Toshiba RN series, such as variants with different resistor values or NPN configurations. Cross-reference with other manufacturers' dual pre-biased transistor arrays in SOT-363 or US6 packages, ensuring matching electrical parameters like hFE, Vceo, and R1/R2 values.