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Product Detailed Parameters
- Description：TRANS 2PNP PREBIAS 0.2W US6
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：10kOhms
- Resistor - Emitter Base (R2)：10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 10mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：200MHz
- Power - Max：200mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：US6
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Overview
The RN2902,LF(CT is a dual pre-biased BJT array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors within a US6 surface-mount package (SC-88/SOT-363). The device supports a maximum collector current of 100mA and a collector-emitter voltage of 50V. Internal biasing resistors are configured with R1 at 10 kOhms and R2 at 10 kOhms. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 10mA/5V and a maximum saturation voltage of 300mV at 250µA/5mA. The transition frequency is rated at 200MHz with a maximum power dissipation of 200mW.
Feature Summary
- Integrates dual PNP transistors with fixed internal biasing resistors to simplify circuit design.
- Utilizes the compact US6 (SOT-363) surface-mount package for space-constrained applications.
- Provides consistent switching performance through standardized hFE and Vce(sat) specifications.
Applications
- General-purpose switching circuits requiring dual complementary or identical PNP control.
- Driver stages for low-power logic interfaces.
- Signal routing in portable electronic devices.
Procurement Notes
Verify the complete part number including the suffix before ordering, as variations exist. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications. Ensure the supplier provides official documentation matching the specific manufacturing batch to guarantee parameter consistency.
Selection Notes
Select this component when a dual PNP configuration with matched 10kOhm biasing resistors is required. Compare the 200MHz transition frequency and 200mW power rating against thermal constraints. Verify that the SC-88 footprint aligns with the target PCB layout and that the 100mA current limit meets load requirements.
Part Context
This component belongs to the RN29xx series of digital transistors from Toshiba. It shares the same physical package and general electrical limits as other variants in the family but differs in internal resistor values and transistor polarity. The US6 package is standard for small-signal dual arrays in mobile and consumer electronics.
Replacement Considerations
Publicly confirmed substitute part numbers were not identified in the provided source material. Cross-referencing with other dual PNP arrays in the SOT-363 package requires manual verification of resistor ratios and hFE ranges.
FAQ
What are the specific values of the internal biasing resistors?
The internal base resistor (R1) is 10 kOhms and the internal emitter resistor (R2) is 10 kOhms.
What is the maximum power dissipation for this device?
The maximum power dissipation is specified as 200mW.
Is this component suitable for high-frequency applications?
Yes, it has a transition frequency (fT) of 200MHz, making it suitable for moderate-speed switching applications.
