RN2903FE(TE85L,F)

RN2903FE(TE85L,F)

$0.26
  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-

SKU:730df4a7113f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP PREBIAS 0.1W ES6
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN2903FE(TE85L,F)

Overview

The RN2903FE(TE85L,F) is a dual pre-biased digital transistor manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors into a single surface-mount package, specifically the SM6 (SC-74/SOT-457) form factor. The device is designed for switching applications, featuring a collector-emitter voltage rating of 50V and a continuous collector current of 100mA. Internal resistor values are configured as R1 at 47 kΩ and R2 at 47 kΩ for both channels. With a transition frequency of 250MHz and a maximum power dissipation of 300mW, it supports efficient circuit design by reducing component count.

Feature Summary

  • Integrates two PNP transistors with built-in bias resistors to reduce printed circuit board space and assembly costs.
  • Utilizes an ultra-super-mini 6-pin surface mount package for compact equipment manufacturing.
  • Provides stable switching performance with specified DC current gain characteristics under defined test conditions.

Applications

  • Switching circuits in consumer electronics
  • Inverter circuits for logic level translation
  • Interface circuits between microcontrollers and peripheral devices
  • Driver circuits for low-power loads

Procurement Notes

Verify the complete part number including the suffix TE85L,F to ensure correct packaging and lead-free compliance. Confirm the manufacturer is Toshiba Semiconductor and Storage. Check RoHS status and moisture sensitivity level requirements against your assembly process standards before ordering.

Selection Notes

Select this component when a dual PNP configuration with fixed 47kΩ bias resistors is required. Ensure the 50V voltage rating and 100mA current capacity meet the load requirements. Compare internal resistance ratios with other RN series variants if different biasing characteristics are needed for specific interface voltages.

Part Context

This component belongs to the RN1xxx/RN2xxx series of bias resistor built-in transistors from Toshiba. These devices are engineered to simplify digital circuit designs by replacing discrete transistors and external base resistors with a single integrated solution, facilitating miniaturization in portable and high-density electronic systems.

Replacement Considerations

Compatible substitutes include other dual PNP pre-biased transistors with similar pinouts and electrical ratings, such as the RN2903 from other manufacturers or equivalent parts within the Toshiba RN29xx family that share the SM6 package and 47kΩ/47kΩ resistor configuration.

RN2903FE(TE85L,F)RN2903FE(TE85L,F)
$0.26
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