RN2903,LF

Overview

The RN2903,LF is a digital transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP transistors with built-in bias resistors in a compact surface-mount package. The device is designed for switching applications requiring high gain and low saturation voltage. Key electrical specifications include a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA per element. The unit operates within a temperature range of -40°C to +150°C and features an internal base resistor of 10kΩ and emitter resistor of 10kΩ.

Feature Summary

• Integrated dual PNP configuration with pre-biased resistors simplifies circuit design
• High DC current gain ensures efficient switching performance
• Low saturation voltage minimizes power loss during conduction
• Automotive qualification supports reliability in demanding environments

Applications

• General-purpose switching circuits
• Driver stages for relays or small loads
• Logic level translation interfaces
• Automotive electronic control units

Procurement Notes

Verify the exact suffix against the manufacturer's official documentation to confirm pinout compatibility and resistance values. Confirm RoHS compliance status and automotive qualification requirements prior to integration into final designs.

Selection Notes

Select this component when a dual PNP solution with integrated biasing is required to reduce board space. Ensure the 100mA current rating meets load requirements. Verify that the 50V voltage rating exceeds the maximum circuit potential.

Part Context

This part belongs to Toshiba's RN series of digital transistors. These devices combine bipolar junction transistors with on-chip resistors to replace multiple discrete components. The LF suffix typically indicates lead-free packaging compliant with environmental directives.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Toshiba's official cross-reference guides for equivalent digital transistor arrays.