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The RN2904FE,LF is a dual pre-biased NPN transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two NPN transistors with built-in bias resistors in an ES6 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 100mA. The device features a DC current gain (hFE) of at least 80 at Ic=10mA and Vce=5V, with a saturation voltage (Vce(sat)) max of 300mV at Ib=250µA and Ic=5mA. Internal resistors R1 and R2 are both 47kΩ. The transition frequency is 200MHz, power dissipation is 100mW, and it complies with RoHS3 standards.
Verify the complete part number including the suffix LF for lead-free compliance when ordering. Confirm the ES6 package type matches the PCB footprint requirements. Check the datasheet for specific handling instructions regarding moisture sensitivity level 1. Ensure the supplier provides original manufacturer documentation to guarantee component authenticity and traceability.
Select this component when a dual PNP configuration with 47kΩ base and emitter resistors is required. Compare against similar Toshiba RN series parts if different resistor values or NPN/PNP polarity are needed. Consider the 100mW power dissipation limit and thermal management needs for the ES6 package in dense layouts.
This part belongs to the Toshiba RN series of digital transistors, which combine bipolar junction transistors with on-chip biasing networks. The RN2904 variant specifically denotes a dual PNP configuration, distinguishing it from the RN1904 NPN counterpart. The FE suffix typically indicates specific tape-and-reel packaging variations within the standard product line.
Direct substitutes include other Toshiba RN2904 variants with compatible suffixes such as RN2904,LXHF(CT. Verify that any replacement maintains the same ES6 package dimensions and identical 47kΩ resistor values to ensure pin-to-pin compatibility without circuit modification.