RN2904FE,LXHF(CT

RN2904FE,LXHF(CT

$0.34
  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-

SKU:1dcc159bc260 Category: Brand:

  
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Product Detailed Parameters

  • Description:AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz
  • Power - Max:100mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:ES6

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RN2904FE,LXHF(CT

Overview

The RN2904FE,LXHF(CT is a pre-biased dual PNP transistor array manufactured by Toshiba Semiconductor and Storage. It integrates two PNP bipolar junction transistors with built-in bias resistors in an ES6 surface-mount package, equivalent to SOT-563 or SOT-666. Key electrical parameters include a collector-emitter breakdown voltage (Vceo) of 50V, a maximum continuous collector current (Ic) of 100mA, and a transition frequency (fT) of 200MHz. The device features a base resistor (R1) and emitter resistor (R2) of 47kΩ each, resulting in a DC current gain (hFE) of at least 80 at 10mA and 5V. The saturation voltage (Vce(sat)) is maximized at 300mV under specific test conditions, with a total power dissipation of 100mW.

Feature Summary

  • Integrates dual PNP transistors with fixed internal bias resistors to simplify circuit design and reduce component count.
  • Optimized for high-speed switching applications with a transition frequency of 200MHz.
  • Designed for automotive reliability with AEC-Q101 qualification.

Applications

  • Switching circuits
  • Inverter circuits
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the exact suffix configuration when ordering, as variations such as LF, LXHF, and CT denote specific packaging or material compliance differences. Confirm that the ES6 package footprint matches the target PCB layout. Ensure the supplier provides valid traceability documentation for automotive-grade components requiring AEC-Q101 certification.

Selection Notes

Select this component when a compact solution for dual PNP switching is required without external biasing networks. Compare the 47kΩ internal resistance values against application requirements to ensure adequate drive capability. Consider the 100mW power dissipation limit and thermal management needs for the small outline package in dense layouts.

Part Context

This part belongs to Toshiba's RN series of digital transistors, which are designed to replace discrete BJT and resistor combinations. The RN2904 variant specifically utilizes PNP technology, contrasting with NPN counterparts like the RN1904 series. The FE designation typically indicates a specific tape-and-reel packaging format within the broader product family.

Replacement Considerations

Direct substitutes may include other dual PNP pre-biased arrays from manufacturers such as ROHM or ON Semiconductor, provided they match the 50V rating, 100mA current, and similar pinout configurations. Verify that alternative parts meet the same AEC-Q101 automotive standards if used in qualified systems.

RN2904FE,LXHF(CTRN2904FE,LXHF(CT
$0.34
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